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  features 3 ka, 8/20 ? surge capability low clamping voltage under surge bidirectional tvs excellent performance over temperature applications ac line protection high power dc bus protection absolute maximum ratings (@ t a = 25 ? unless otherwise noted) ptvs3-xxxc-th series high voltage, high current tvs diodes *rohs directive 2002/95/ec jan. 27, 2003 including annex and rohs recast 2011/65/eu june 8, 2011. speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. general information the model ptvs3-xxxc-th high voltage, bidirectional tvs diode series is designed for use in ac line and high power dc bus clamping applications. the devices are rohs* compliant. they also meet iec 61000-4-5 8/20 s current surge requirements. *rohs compliant electrical characteristics (@ t a = 25 ? unless otherwise noted) parameter test conditions min. typ. max. unit i d standby current v d = v wm 10 a v (br) breakdown voltage i br = 10 ma ptvs3-380c-th PTVS3-430C-TH 401 440 422 465 443 490 v v c clamping voltage (1) i pp = 10 ka ptvs3-380c-th PTVS3-430C-TH 520 580 v v (br) temperature coef? cient 0.1 %/c c capacitance f = 10 khz, v d = 1 vrms ptvs3-380c-th PTVS3-430C-TH 0.35 0.40 nf asia-paci c: tel: +886-2 2562-4117 ?fax: +886-2 2562-4116 emea: tel: +36 88 520 390 ?fax: +36 88 520 211 the americas: tel: +1-951 781-5500 ?fax: +1-951 781-5700 www.bourns.com (1) v c measured at the time which is coincident with the peak surge current. rating symbol value unit repetitive standoff voltage ptvs3-380c-th PTVS3-430C-TH v wm 380 430 v peak current rating per 8/20 s iec 61000-4-5 i ppm 3ka operating junction temperature range t j -55 to +125 c storage temperature range t s -55 to +150 c lead temperature, soldering (10 s) 260 c
ptvs3-xxxc-th series high voltage, high current tvs diodes speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. users should verify actual device performance in their speci c applications. performance graphs v-i characteristic typical v br vs. junction temperature typical surge current derating current 8/20 s waveform per iec 61000-4-5 this graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 ? current waveform per the iec 61000-4-5 speci cation. this device is not intended for continuous operation at temperatures above 125 ?. 120 0 0 25 50 100 75 125 150 175 ambient temperature (c) percent of rated value 110 100 90 80 70 60 50 40 30 20 10 20 40 60 80 100 120 0 030 25 20 15 10 5 i pp ? peak pulse current (% of i pp ) t ? time (s) test waveform parameters t t = 8 s t d = 20 s t t e t t d = t | i pp /2 percent of v br change 16 6 8 10 12 14 0 2 4 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 junction temperature (t j ) - c 25 c typical waveform under surge 050 40 30 20 10 t ? time (s) current voltage
rev. 11/15 product dimensions ptvs3-xxxc-th series high voltage, high current tvs diodes typical part marking ptvs3-380c-th .......................................................................3380 PTVS3-430C-TH .......................................................................3430 dimensions: mm (inches) epoxy encapsulation materials conform to ul 94v-0. silver plated lead nish conforms to the solderability requirements of jesd 22-b102, pb free solder. package dimensions are shown below: how to order ptvs 3 - 380 c - t h series ptvs = power tvs high current diode peak current rating 3 = 3 ka repetitive standoff voltage 380 = 380 v 430 = 430 v suf x c = bidirectional device package t = through-hole temperature h = high temperature series dim. ptvs3-380c-th PTVS3-430C-TH a 24.15 ?0.72 (0.951 ?0.028) b 2.40 ?0.50 (0.094 ?0.020) c 1.75 ?1.25 (0.069 ?0.049) d 10.80 (0.425) max. e 1.25 ?0.05 (0.049 ?0.002) f 9.30 (0.366) max. g 16.50 (0.650) max. h 6.00 ?1.00 (0.236 ?0.039) speci cations are subject to change without notice. the device characteristics and parameters in this data sheet can and do vary in different applications and actual device perfor mance may vary over time. users should verify actual device performance in their speci c applications. d c h g a f e b


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